A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...

While theoretically the ideal semiconductor, diamond has not yet become mainstream in transistors and other components. Researchers have fabricated a diamond field-effect transistor (JFET) with a ...

TSUKUBA, Japan, July 29, 2022 /PRNewswire/ -- A research team at the International Center for Materials Nanoarchitectonics (WPI-MANA), using a new fabrication technique, has developed a diamond ...

This new FET also exhibits normally-off behavior (i.e., electric current flow through the transistor ceases when no gate voltage is applied, a feature that makes electronic devices safer). These ...

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions. When you purchase through links on our ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...

Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new ...